摘要
The dielectric properties of ceramics with composition of (Sr 1-x Bi x )TiO 3+x/2 (where x =0.05～0.70 ) were measured at frequency of 1 MHz. The experimental results indicate that the dielectric properties of (Sr 1-x Bi x )TiO 3+x/2 system are greatly varied with an increase of the stoichiometric amounts of Bi 2O 3. The relative permittivity of the solid solutions is high, and the dissipation factor is low. The positron annihilation technique(PAT) was adopted to study the defect structure. An explanation of the dielectric properties of Bi-doped SrTiO 3 ceramics has been suggested in terms of electron-compensation and vacancy or defect-compensation mechanisms and space-charge polarization mechanism.
The dielectric properties of ceramics with composition of (Sr 1-x Bi x )TiO 3+x/2 (where x =0.05～0.70 ) were measured at frequency of 1 MHz. The experimental results indicate that the dielectric properties of (Sr 1-x Bi x )TiO 3+x/2 system are greatly varied with an increase of the stoichiometric amounts of Bi 2O 3. The relative permittivity of the solid solutions is high, and the dissipation factor is low. The positron annihilation technique(PAT) was adopted to study the defect structure. An explanation of the dielectric properties of Bi-doped SrTiO 3 ceramics has been suggested in terms of electron-compensation and vacancy or defect-compensation mechanisms and space-charge polarization mechanism.
基金
NationalNaturalScienceFoundationofChina(No .6 9890 2 30 )
