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Integration of 256×256 Element Si Microlens Arrays with PtSi IR Detector Array Devices

Integration of 256×256 Element Si Microlens Arrays with PtSi IR Detector Array Devices
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摘要 Diffractive 11-phase-level Si microlens arrays are fabricated by a special method, i.e. part-etching. The method can increase focal length of diffractive microlens arrays. By using this method, the microlens arrays on the back side of the Si substrate and PtSi IR focal plane arrays(FPAs) on the front side of the same wafer are monolithically integrated together. The IR response characteristics of the integrated devices are improved greatly. Diffractive 11-phase-level Si microlens arrays are fabricated by a special method, i.e. part-etching. The method can increase focal length of diffractive microlens arrays. By using this method, the microlens arrays on the back side of the Si substrate and PtSi IR focal plane arrays(FPAs) on the front side of the same wafer are monolithically integrated together. The IR response characteristics of the integrated devices are improved greatly.
出处 《Semiconductor Photonics and Technology》 CAS 2001年第1期56-59,共4页 半导体光子学与技术(英文版)
基金 NationalHigh -techDevelopmentPlan
关键词 Part etching Microlens array Monolithic integration FPAs 部分侵蚀 微透镜阵列 单片集成 FPAs
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