THE BEHAVIORS OF 48 keV Si IONS IMPLANTED INTO (100) GaAS

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摘要ＴＨＥＢＥＨＡＶＩＯＲＳＯＦ４８ｋｅＶＳｉＩＯＮＳＩＭＰＬＡＮＴＥＤＩＮＴＯ（１００）ＧａＡＳＬｉｕＨｕｉｚｈｅｎ（刘惠珍）；ＣａｏＤｅｘｉｎ（曹德新）；ＺｈｕＤｅｚｈａｎｇ（朱德彰）；ＺｈｕＦｕｙｉｎｇ（朱福英）ａｎｄＣａｏＪｉａｎｑｉｎｇ（曹建清...

作者刘惠珍曹德新朱德彰朱福英曹建清

出处《Nuclear Science and Techniques》 SCIE CAS CSCD 1994年第1期51-57,共7页 核技术（英文）

关键词硅离子移植砷化镓

分类号 O613.72 [理学—无机化学] TN304.23 [电子电信—物理电子学]

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Nuclear Science and Techniques

1994年第1期

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THE BEHAVIORS OF 48 keV Si IONS IMPLANTED INTO (100) GaAS

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