摘要
叙述了金属硅化物的形成、组分、性质和金属硅化物形成过程中的问题。简述了金属硅化物的形成机理、分析技术及其在金属硅化物(Pd_2Si,PtSi 和IrSi)肖特基势垒红外电荷耦合器件焦平面阵列中的应用。
This paper describes the formation,composition,and properties of metal silicides as well as some problems during the formation process.The formation mechanism and analysis technology are outlined together with the appli- cations of metal silicides(Pd_2Si,PtSi,IrSi)Schottky barrier irfrared CCD focal plane arrays(SB-IRCCD FPAs).
出处
《半导体光电》
CAS
CSCD
北大核心
1992年第1期12-16,35,共6页
Semiconductor Optoelectronics