大衬底面积GaAs红外发光二极管

Research on GaAs IR LED with Large Substrate Area

报道了影响用于红外控制技术和红外遥控技术的光源——GaAs 红外发光二极管性能参数的二个重要因素:(1)液相外延生长;(2)欧姆接触。此外,还报道了该器件的主要电光参数,给出了 P-I、V-I 特性曲线以及发射光谱曲线。

Two key factors,i.c.liquid phase cpitaxy growth and ohmic contact,are reported,which have an effect on performance parameters of GaAs infrared(IR)light emitting diode(LED)used as an optical source for IR control and IR remote control techniques.Main electrooptic Parameters of this LED are given as well as P-I and V-I characteristic and emitting speetrum curves.