基体偏压和淀积后真空退火对ITO膜结构和透射率的影响

Effect of Base Biasing Voltage and Postdeposition Vacuum Annealing on Structure and Transmittance of ITO Films

通过对直流磁控偏压溅射的 ITO 膜作结构和光谱分析表明,基体偏压可导致膜中 In_2O_3沿(222)晶面择优取向,淀积后真空退火不影响 In_2O_3沿(222)晶面取向生长,正、负偏压对膜在红外区透射率影响明显不同。

It is shown,by structure and spectrum analysis on DC biasing magnetron spitting ITO films,that biasing voltage would result in In_2O_3 growth in crystal plane(222)orientation and that annealing would not affect the growth along crystal plane(222).It is also shown that the effect of negative and positive biasing on the transmittance of deposited ITO films is apparently different in infrared region.