摘要
静电感应器件通过控制漏和栅的电压来改变沟道中的势垒高度,从而控制来自源区的多数载流子量,并通过静电式控制沟道中的电势分布,来控制电流。本文说明了BSIT单管及大电流高增益复合管的主要工艺过程和工作原理,特别是BSIT由小电流区域变到大电流区域的过程中Ⅰ-Ⅴ曲线的变化及机理。为了更好地了解BSIT的工作原理,针对DX421型BSIT器件作了计算机模拟,最后对其单管和大电流高增益复合管的一些参数如电流放大系数、阻断电压和饱和压降进行了讨论。
The current of bipolar mode static induction transistor comes from source electrons which are controlled by gate and drain voltage. In this paper we discusse the major technological process and principles of BSIT and its large current coupled device with high h_Fs, particularly the changes and principles of Ⅰ-Ⅴ curve of BSIT during the change from small current to large current. In order to understand the principle of BSIT more clearly, using DX421 BSIT we have done its computer simulation. Finally we discusse the major parameters of BSIT and its large current coupled device, h_Fs, source-drain voltage, saturation voltage drop.
出处
《半导体情报》
1992年第3期1-13,共13页
Semiconductor Information
关键词
静电感应
晶体管
模拟
双极
Bipolar transistor
static induction transistor
Computer simulation
