硅微波功率晶体管内匹配及功率合成研究

Study on Intermatching and Power Combination for Si Microwave Power Transistor

本文介绍了常用的T型网络和Л型网络及双节四元件网络。着重论述T型网络的设计方法,分析T型网络的带宽特性与相移特性,讨论了工艺偏差对匹配特性的影响,并对晶体管的功率合成进行了研究。在上述基础上,进行了双胞内匹配及合成研究,得到了工作频率为2.7～3.1GHz时,单胞连续波输出功率4.4W,双胞合成输出为7.8W的管子,合成效率达88.6％。

Commonly used T network, JI network,and two-section four-reactance network are introduced. The design of T network is emphasized. The properties of band-width and phaseshift of T network are analyzed. Tile influence of technology on matching network is discussed. For single chip device, 4.4 W and for two-cell matching transistor 7.8 W of CW output powerat 2.7～3.1 GHz are obtained. The efficiency of matching is over 88.6%.