摘要
为实现砷化镓声电输运,必须在外延层中建立电子输运沟道.本文对金属-n型外延层-半绝缘衬底结构的输运沟道给出耗尽分析的解析表达式,分析了外延层厚度、掺杂浓度、偏置电压等参数对输运沟道耗尽特性的影响,以及器件表面存在氧化层时对器件工作特性的影响.
This paper gives an analytical formula of channel depletion for a metal/n-type GaAs/se-mi-insulate GaAs structure.The effects of channel parameters,such as epitaxy layer thickness,doping density,gating voltage,as well as surface oxide layer, on channel depletion charac-teristics are studied.The developed model can be used for device design.
基金
国家目然科学基金
机电部预研基金
