摘要
我们通过切换耦合电极的方法制备了μc-si:H/a-Si:H多层膜.这种多层膜的电导率呈各向异性,暗电导温度关系曲线可近似地看成由两条直线组成.随着 μc-Si:H亚层厚度的减小,喇曼谱中晶态峰降低,暗电导温度曲线的弯折点移向高温段.我们用纯电阻模型和单量子阱模型进行了讨论.
The μc-Si:H/a-Si:H multilayers are synthesized by auto-exchanging two types of coup-ling electrodes.The conductivity of these films is anisotropic, the curve of dependence of darkconductivity on temperature is made of two lines.As the sublayer thickness decreases, the cry-stalline peak in Raman Scattering Spectrum de creases, and the inflection point of dark-con-ductivity-temperature curve shifts toward higher temperature.These results are discussed usingpure resistance model and one-dimension quantum-well model.
