摘要
研究了中子辐照硅中正电子湮没寿命谱的等时退火特性,得到与文献[1]不相同的结果.实验资料对比表明,本工作的结果与EPR、IR、DLTS的实验能更好地符合.对[1]中的双空位运动形成四空位的模型提出质疑.指出中子能谱不同很可能是导致缺陷俘获态寿命退火特性相异的重要原因.
The isochronal behavior of Positron Annihilation Lifetime(PAL) signals in neutron-irra-diated silicon has been studied. A distinct result from that reported in reference[1] is observed.The data of the present experiments are in good agreement with the results studied by EPR, IRand DLTS. We comment on the model, divacancy aggregation and quadrivacancy formation,proporsed in reference[1]. It is suggested that the different neutron spectra may cause thedifferent annealing behavior of PAL.
关键词
硅
中子辐照
正电子湮没
寿命谱
Crystals
Defects
Semiconductor Materials
Defects
