摘要
研究了离子注入展宽p-n结终端工艺,介绍了离子注入剂量或者注入净电荷选择理论.实验证明采用本工艺获得产品的击穿电压高于耗尽层刻蚀工艺所得产品的击穿电压.
Junction termination extension has been studied using ion implantation. Theory choos-ing the implanted net activated charge is presented. Experimental results show the breakdownvoltage of the product obtained from this process is higher than that from the etch depletionprocess.
