摘要
在 ELO/SOI膜上制备出了短沟道 MOSFET.电子及空穴场效应迁移率分别为 360 cm^2/V.s及 200 cm^2/V.S.PMOS及 NMOS晶体管的亚阈值斜率分别为 190mV/dec和 220mV/dec,漏泄电流为10^(-10)A/μm数量级.本文讨论了 SOI-MOSFET的器件特性.
Short-channel MOSFETs have been fabricated on ELO/SOI structure. Electron and holefleld-effect mobilities of the MOSFETs are 360cm^2/V.s and 200cm^2/V.s, respectively. TheSub-threshod slopes are 190mV/dec (P-channel MOS) and 220mV/dec (N-channel MOS),re-spectively. The leakage current is less than 10^(-10)A/μm. The characteristics of MOSFET/SOIhave been discussed.
