摘要
我们在研制和生产双层布线的 3μm CMOS LSI器件时,采用了 PECVD SiON(等离子增强化学气相沉积的氮氧化硅)膜作金属层之间的绝缘层.这种薄膜具有很小的压应力,很低的针孔密度,良好的台阶覆盖性等优点.这种绝缘膜是采用PECVD沉积工艺,以氮冲稀的低浓度SiH_4(3％)和N_2O气体为原料制得的. 本文着重介绍 PECVD SiON膜的性质及其在双层互连工艺中的应用.
PECVD SiON films have been used to develop and fabricate 3μm CMOS LSI devices asan intermetal dielectric. The films have advantages of slightly compressive stress, very low pin-hole density and superior step coverage. The SiON films are deposited by plasma enhancedchemical vapor deposition of low concentration SiH_4(3%) diluted by N_2 with N_2O. This paper lays emphasis on the properties of PECVD SiON films and its applications intwo level interconnection technology.
