摘要
本文提出了一个不连续类氧化层界面多晶硅发射极晶体管理论模型,根据多晶/单晶硅界面的性质空穴分别以隧道方式或热发射方式通过界面的不同部位.计算机模拟的结果得到了类氧化层界面的连续性、多晶硅膜厚、类氧化层两边的界面态密度、类氧化层厚度和多晶/单晶硅界面杂质浓度峰值等参数与多晶硅发射极晶体管(PET)电学特性的关系.
A discontinuous oxide-like interface theory model of polysilicon emitter transistor (PET) isproposed. According to the characters of the polysilicon-monosilicon interface, holes pass throu-gh the different parts of the interface by tunneling or thermionic.emission. It is obtained byusing the computer simulation that the electronic characterics of the PET depend on the interfacecontinuity, polysilicon thickness, interface state density, continuous oxide-like layer thickness andthe maximum dopant concentration at the interface.
