摘要
本文在仔细分析薄膜SOI器件特点及其特殊物理效应的基础上,发展了电路模拟所需要的N沟道薄全耗尽SOI膜MOSFET强反型电流模型.模拟计算和实际SOI器件测试结果之间的对比证实,在合理提取器件参数的情况下,该模型公式可较好地描述薄膜SOI器件的电流特性.
An analytic current model for thin film SOI N-channel MOSFET's, suitablefor circuit simulator such as SPICE was developed on the basis of considering thespecial physical effects of thin film full depleted SOI devices. The formulas of themodel are similar to those of BSIM (Berkeley Short-channel IGFET Model) andconvenient to model parameter extraction so that it can be implemented into SPICEeasily. The experimental results show good agreement with model predictions if themodel parameters are extracted correctly.
