摘要
本文报道了GaAs(100)衬底上CdTe外延膜的喇曼光谱,并提出利用实验上测得的CdTe外延膜LO声子峰宽度和位置来确定外延膜应变的处理方法.结果表明,对于厚度达2.5 μm的 CdTe外延膜,仍有应变存在,且应变大小与样品生长条件有关.从喇曼谱的分析中还提取了样品质量的有用信息其质量分析结果得到X射线双晶衍射和扫描电子显微镜表面形貌分析结果的支持.
We report the Rarnan scattering from CdTe film epitaxially grown on GaAs(100) substra-tes, and present a method to determine the strain in epitaxial layer using both the width and po-sition of LO phonon Raman peak. The results Show that in Cd Te films with thickness up to about2.5μm there is still strain, and that the magnitude of strain depends on growth conditions. Fromthe analysis of Rarnan spectra we also extract out meaningful information about the film quality,supported by X-ray double crystal diffraction as well as scanning electronic microscopy expe-riments.
基金
国家自然科学基金
