摘要
用高空间分辨本领的富利埃变换红外光谱研究了CZ法生长硅薄片中氧的沉淀.用此技术我们能探测到单个沉淀物的聚集所贡献的1230cm^(-1)处的吸收带.实验发现在1100℃退火80分钟就足以形成薄层盘形的SiO_2沉淀物.获得的样品中沉淀物的空间分布图表明这些沉淀物的分布是不均匀的,主要分别分布在离后表面和外延衬底界面约100μm距离内.
Oxygen precipitation in commercial silicon Czochralski wafers is investigated by using thehigh spatial resolution Fourier transform infrared spectroscopy. With this technique we areable to detect the 1230 cm^(-1) absorption band due to the presence of aggregatinn of single preci-pitates. It is found that even a temperature of 1100℃ for 80 min is enough to form SiO_2 pre-cipitates in platelet shape. A complete mapping of these wafers show that such precipitates arenot distributed homogeneously bur mainly up to a distance of about 100 μm from the back sur-face and from the epi-substrate interface.
