摘要
本文报告了硅单晶中替位碳红外吸收带温度特性和光谱分辨率对碳带特征参数影响的研究结果.在 80～310K温度范围,碳带半宽度随测量温度降低而线性减小,吸收系数和峰位分别随温度下降而线性增加和有规律地向高频方向移动;液氮温度时碳带吸收系数较室温增加一倍;低于液氮温度时碳带特征参数不随测量温度而变.不同光谱分辨率(1-4cm^(-1))测量结果表明:碳带吸收系数和半宽度分别随光谱分辨率提高增加和减小.室温和液氮温度碳含量的定量测量,光谱分辨率分别以2cm^(-1)和1cm^(-1)为宜.
This paper reports the temperature property of infrared absorption band of substitutionalcarbon (C) is si crystals. The experimental results show that spectral resolution has influen-ce on C band specific parameter. As temperature falls in the range of 80-310K, the fullwidth at half maxium (FWHM) of the C band has a linear reduction, the absorption coeffi-cient increases linearly and C peak shifts regularly towards high photon energy. At LN-tem-perature, the C band absorption coefficient is double thav that at room-temperature. The cha-racteristic parameters of C band does not change below 78K. The measuring results with diffe-rent spectral resolution (1～4 cm^(-1)) show that the absorption coefficient of the C band is in-creased and the FWHM decreased with raising spectral resolution. At room and LN-tempera-tures, it is suitable to determine C content by ising 2 cm^(-1) and 1 cm^(-1) spectral resolution,respectivily.
