摘要
本文对 TF-SOI/MOS管,采取双栅极模型,用有限元和有限差分法分别求解沟道区的电势分布,得到了前栅(front gate)及背栅(back gate)MOS体电势二维分布.总结了指导TF-SOI-MOS 器件研制的要点.并对TF-SOI-MOS器件数值模拟方法进行了讨论.
Finite element and finite difference methods are used to calculate the channel potentialHistribution of TF-SOI-MOSFET with double-gate. The front gate, back gate and 2-D MOSbody potential distribution are obtained. Some conclusions to instruct the manufacture of TF-SOI-MOS devices are made and the numerical simulation of TF-SOI-MOS devices is discus-sed
基金
电子科学院项目
关键词
MOS器件
电热分布
沟道区
Finite difference method
Finite element method
Semiconductor device manufacture
Semiconductor device models
