摘要
在HgCdTe环孔 p n结器件的研制过程中 ,经常会出现一些反常现象 ,如负的开路电压和负的光电压等。现对上述现象进行理论分析 。
In the processing of HgCdTe loophole p n junction, some abnormal characteristics (for example, the negative threshold voltage) often occur. Based on theoretical analysis, the explanation of those abnormal characteristics occurring on the testing is presented, and the results have been verified by experiments.
出处
《红外技术》
CSCD
北大核心
2002年第6期81-85,共5页
Infrared Technology
