摘要
ＰｏｓｉｔｒｏｎａｎｎｉｈｉｌａｔｉｏｎｓｔｕｄｙｏｆｄｅｆｅｃｔｓｉｎＧａＡｓｉｒｒａｄｉａｔｅｄｂｙｆｉｓｉｏｎｎｅｕｔｒｏｎＺｈｕＳｈｅｎｇＹｕｎ，ＬｉＡｎＬｉ，ＬｕｏＱｉ，ＦａｎＺｈｉＧｕｏ，ＺｈｅｎｇＳｈｅｎｇＮａｎａｎｄＧｏｕＺｈ...
The defects in Si doped, N type HB GaAs single crystal irradiated by E n1 MeV fission neutrons (6.5 ×10 15 cm -2 and 1.4×10 14 cm -2 ) have been investigated using positron annihilation lifetime technique. The mono and di vacancies were created by irradiation and the tri vacancies were formed during annealing. The concentration of defects is proportional to the irradiating neutron fluence. Three annealing stages were observed at 250, 450 and 650 C for the mono , di and tri vacancies, respectively.
关键词
质子湮没
砷化镓点缺陷
裂变中子辐照
GaAs, E n1 MeV fission neutron irradiation, Defects and defect annealing, Positron annihilation.
