ITRS 2001与芯片特征尺寸的缩小

The ITRS 2001and reduction of the chip feature size

2001《国际半导体技术指南(ITRS)》规划出半导体技术未来15年内的发展。它主要强调芯片特征尺寸的进一步缩小,2001年0.13μm,2004年90nm,2007年70nm,2010年50nm,2013年30nm,2016年22nm。阻碍芯片特征尺寸缩小的关键是光学光刻技术,为此,世界各强国加速开发下一代光学光刻技术,如157nm光学光刻、电子束光刻(EBL)和极紫外线(EUVL)光刻等。展望了缩小芯片特征尺寸的前景和存在的问题。

The ITRS2001makes a programme about semiconductor technology in the next fifteen years.The further reduction of chip feature size is emphasized:2001/0.13μm,2004/90nm,2007/70nm,2010/50nm,2013/30nm and2016/22nm.The main reason hindering the reduc-tion of the chip feature size is optical lithography technology.The New Optical lithogtaphy tech-nologies are developed fastly in the world,such as157nm optical lithography,EBL and EUVL.This paper introduces a controversy for the chip feature size reduction.The prospects and existing question s of chip feature size reduction are forecasted.