掩模制作中的邻近效应

Proximity effects during mask fabrication

计算模拟了激光束和电子束直写加工的掩模畸变,并分别用理想掩模和有畸变的掩模进行投影光学光刻过程的模拟和比较,讨论了光学邻近效应校正掩模在加工过程中所产生的畸变对传递到最终基片上的图形的影响。模拟分析指出,掩模加工中的邻近畸变应在设计光学邻近校正掩模时予以注意,即在掩模设计时,应把掩模加工中的邻近效应和光刻图形传递过程的邻近效应进行总体考虑,以便设计出最优化的掩模,获得最好的邻近效应校正效果。

In this paper,we discuss the influence of the mask fabricated by EBL or laser writ-ing on pattern quality.Distortion effect in optical proximity corrected(OPC)masks on wafer level image has been investigated using combined simulation of photomask patterning process and pro-jection optical lithography.Proximity effects in e-beam lithography or laser direct writing have been taken into account for the generation of mask features.The simulation demonstrated that the OPC compensation features are significantly distorted at mask level.Such distortions have notice-able impact on the wafer level resist images.