摘要
研究了 Ni/ Pd双层薄膜在硅衬底上的硅化物形成过程 .结果表明 ,加入 Pd层后 ,退火形成 Ni1 - x Pdx Si固熔体 ,该固熔体比 Ni Si的热稳定性好 ,使得 Ni Si向 Ni Si2 的转变温度升高 .加入 Pd的量越多 ,Ni Si2 的成核温度越高 ,并用经典成核理论解释了该现象 .
The silicide formation for Ni/Pd bilayers on Si substrate is investigated.The results show that,when adding Pd into Ni/Si,thermal annealing leads to formation of a solid solution Ni 1-x Pd x Si layer with better thermal stability than NiSi.The nucleation temperature for NiSi 2 is retarded due to the Pd addition.The more Pd added,the higher the NiSi 2 nucleation temperature is.In the mean time,the nucleation for PdSi is promoted due to Ni addition.The enhancing of NiSi thermal stability is well explained by classic nucleation theory.
基金
国家自然科学基金 (批准号 :60 10 60 0 2 )
上海市教委和上海教育发展基金会曙光计划
中国教育部博士点基金
国家科委 -比利时弗兰德合作资助项目~~