X射线三轴晶衍射法测量半绝缘GaAs单晶的化学配比

Stoichiometry in SI-GaAs Bulk Materials by Triple Axis Mode X-Ray Diffraction Measurements

采用 X射线三轴晶衍射法 ,根据 As间隙原子对作为过量 As在 Ga As单晶材料中存在的主要形式的模型 ,可以无损、高精度测量半绝缘 Ga As单晶的化学配比 .并探讨了引起晶格变化的原因及其与熔体组分的关系 ,对于制备高质量 Ga As单晶及其光电器件具有重要的意义 .

The lattice parameters of SI GaAs are accurately measured by triple axis mode X ray diffraction method.The stoichiometry in SI GaAs bulk materials is calculated based on the model of the interstitial pairs for describing excess arsenic in GaAs.Triple axis mode X ray diffraction measurements are non destructive and high precision.The reasons of affecting the lattice parameters of SI GaAs are discussed.