摘要
研究了 14～ 16nm的 H2 -O2 合成薄栅介质击穿特性 .实验发现 ,N2 O气氛氮化 H2 -O2 合成法制备的薄栅介质能够有效地提高栅介质的零时间击穿特性 .H2 -O2 合成法制备的样品 ,其击穿场强分布特性随测试 MOS电容面积的增加而变差 ,而氮化 H2 -O2 合成薄栅介质的击穿特性随测试 MOS电容面积的增加基本保持不变 .对于时变击穿 。
The breakdown characteristics of the thin gate oxide (14～16nm) grown in H 2 O 2 ambient are presented.It is found that annealing in N 2O can considerably improve the zero time breakdown characteristics of the thin gate oxide.For the H 2 O 2 grown gate oxide the breakdown characteristics deteriorate with increase of the tested area.For the N 2O annealed H 2 O 2 grown dielectric the breakdown characteristics almost remain unchanged with increase of the tested area.Nitridation also obviously improves the TDDB characteristics of the thin gate oxide.
