一种敏感的MOSFET ESD潜在损伤检测方法

A Sensitive Testing Technique to ESD Latent Damages in MOSFET

MOSFET ESD潜在损伤的有效检测一直是一个难以解决的问题 .实验对比发现 ,MOSFET沟道电流的 1/ f噪声比传统的电参数更能敏感地反映栅氧化层中 ESD潜在损伤的情况 .在相同的静电应力条件下 ,1/ f噪声的变化要比常规电参数敏感的多 ,其功率谱幅度的相对变化量比跨导的最大相对退化量大 6倍以上 ,因此可以作为MOSFET ESD潜在损伤的一种敏感的检测方法 .在给出实验结果的同时 。

Detecting of ESD latent damages in MOSFET is an ever existing difficult problem in VLSI technology.Based on experiments,it is found that 1/f noise testing technique is more sensitive than other traditional electric parameters testing techniques (such as threshold voltage etc.).Under the same ESD stress conditions,the amplitude changes of 1/f noise spectra induced are much more detectable than those of other electric parameters.For example,the relative changes of 1/f noise spectra amplitudes are six times larger than those of threshold voltages.So,the 1/f noise of channel current in MOSFET can be employed as a sensitive testing technique of ESD latent damages in MOSFET.Further more,the physics mechanism is thoroughly investigated.