摘要
使用TSUPREM - 4二维集成电路工艺仿真系统对P -MOS栅氧化过程中杂质分凝行为进行了计算机仿真 以数据方式和绘图方式定量地描述了杂质的分凝行为 。
The simulation of P MOS gate oxidation process impurity segregate effect is implemented with the TSUPPEM 4 2D IC Process Simulation System. Impurity segregate effect is described quantificatively by data and plot. The methd used to change oxidation step and mode to restrain impurity segregate effect is given.
出处
《山东大学学报（工学版）》
CAS
2002年第5期476-479,共4页
Journal of Shandong University（Engineering Science）
