一种新的半导体材料和器件结构:COS

CRYSTALLINE OXIDES ON SEMICONDUCTOR A NOVEL SEMICONDUCTOR MATERIAL AND DEVICE STRUCTURE

国际半导体技术发展进程表预期器件的特征尺寸不久将减小到 0 1μm以下 ,SiO2 作为MOS器件栅介质遇到不可克服的困难 .人们在寻找新的栅介质材料时 ,提出了一种新的结构 ,称为半导体上的晶态氧化物 (COS) .最近 ,COS被用作Si衬底上生长GaAs的过渡层 ,成为半导体材料和器件发展中一项新的突破 .

The International Technology Roadmap for Semiconductors(ITRS) predicts the more aggressive scaling rule that the feature size of Si chips will soon reach the 0\^1μm scale. It will be impossible to use SiO\-2 again as the gate dielectric in next generation devices because of the unacceptable large leakage current. In the search for new alternatives, a novel structure\_\_COS(crystalline oxides on semiconductor) has been suggested. Recently, this COS structure was employed to serve as a buffer layer in the epitaxial growth of GaAs on Si substrate.This invention led to a breakthrough in the development of semiconductor materials and device technology. We present a brief review of the background and progress of COS technology.