微波输入功率引起a-C∶F薄膜交联结构的增强

Enhancement of cross-linked structure for a C-∶F films caused by microwave input power

使用C2 H2 和CHF3 的混合气体 ,在改变微波功率的条件下 ,利用微波电子回旋共振等离子体增强化学气相沉积方法制备了氟化非晶碳薄膜 (a C∶F) .薄膜的傅里叶变换红外光谱分析结果表明 :薄膜中的CC与C—F键含量的比值随功率的增加而相应地增大 ;借助于紫外可见光谱分析发现 ,薄膜的光学带隙随功率的增大而减小 .由此推断微波输入功率的提高有助于增强薄膜的交联结构 .a

Using precursor gases of C 2H 2 and CHF 3, fluorinated amorphous carbon (a C∶F) films were prepared by means of microwave electron cyclotron resonance plasma\|enhanced chemical vapor deposition, only adjusting microwave input power. The results from Fourier transform infrared spectroscopy of these films have shown that the ratio of CC to C—F concentration in the films increases with the increase of microwave power. By means of ultraviolet visible spectroscopy analysis, it is found that the optical band gap ( E 04 ) of a C∶F films decreases with increasing power. Hence, enhancement of cross linked structure of the films with increasing power can be perorated. This enhancement effect has also been verified by using ac conductivity and x ray photo electron spectra analysis.