浮栅ROM器件x射线剂量增强效应实验研究

Experimental study on x-rays dose enhancement effects for floating gate ROMs

给出了浮栅ROM器件在钴源和北京同步辐射装置 (BSRF) 3W1白光束线辐照的实验结果 ;比较了两种辐照的实验结果及其损伤异同性 .通过实验在线测得位错误数随总剂量的变化 ,给出相同累积剂量时x射线辐照和γ射线辐照的总剂量效应损伤等效关系 .获得了浮栅ROM器件x射线剂量增强因子 .

Experimental results of x ray dose enhancement effects are given for floating gate read\|only memory(ROMs) irradiated in the Beijing Synchrotron Radiation Facility.The wrong byte numbers vs.total irradiation dose have been tested and the equivalent relation of total dose damage is provided compared the response of devices irradiated with 60 Coγ ray source.The x ray dose enhancement factors for floating gate ROMs are obtained firstly in our country.These results can be an effective evaluation data for x rays radiation hardening technology.