中子辐照直拉硅中的本征吸除效应

The intrinsic gettering in neutron irradiation czochralski-silicon

对经中子辐照的直拉硅中的本征吸除效应进行了研究 .结果表明 :经中子辐照后 ,直拉硅片经一步短时退火就可以在硅片表面形成完整的清洁区 .清洁区宽度受辐照剂量和退火温度所控制 ,清洁区一旦形成 ,就不随退火时间变化 .大量的缺陷在中子辐照时产生 ,并同硅中氧相互作用 ,加速了硅片体内氧的沉淀 ,是快速形成本征吸除效果的主要因素 。

In this work,the intrinsic gettering in neutron irradiated czochralski-silicon is studied. The result shows that a denuded zone at the surface of the neutron irradiated czochralski-silicon wafer may be formed through one-step short-time annealing. The width of the denuded zone is dependent on the annealing temperature and the dose of neutron irradiation, while it is irrelated to the annealing time in case the denuded zone is formed. We conclude that the interaction between the defects induced by neutron irradiation and the oxygen in the silicon accelerates the oxygen precipitation in the bulk, and becomes the dominating factor of the quick formation of intrinsic gettering. It makes the effect of thermal history as the secondary factor.