MOVPE生长不掺杂薄GaAs层线偏振光吸收系数和折射率的电流感生变化

Current-induced Changes on Absorption Coefficient and Refractive Index at Linearly Polarized Light in Undoped Thin GaAs Layer Grown by MOVPE

本文报道研究MOVPE技术生长微米量级不掺杂薄GaAs层的线偏振光吸收系数电流感生变化(△α)和折射串电流感生变化(△n)的实验结果。发现通有电流的薄GaAs层内△α和△n值随光波长(λ)呈脉冲线型非线性变化。电流增加,△α,△n和脉冲线型函数的半极值全宽值都明显增大,而△α-λ谱和△n-λ谱的峰值对应的λ_p值明显移向长波端。不掺杂薄GaAs层内电流感生的这种光学非线性效应,对了解具有多薄层结构的电流注入型半导体光电子器件和集成光学元件的物理机制,设计和改进器件性能具有实用参考价值。

The experimental investigations on the current-induced changes of absorption coefficient and refractive index at the linearly polarized light in undoped thin GaAs layer on the order of micrometer grown by MOVPE are reported. It found that the relations between the current-induced changes of the absorption coefficient (△σ) or the refractive index (△n) and wavelength (λ) is a nonlinear with a pulse-shaped as injected current. △σ. △n and the full width at half maximum in △σ-λ spectrum or △n-λ spectrum is markely increased by increased current. respectively. The wavelength (λp) at maximum in △σ-λ spectrum or △n-λ spectrum is also moved to long wavelength edge as increased current. The optical nonlinearities effect caused by current in undoped thin GaAs layer grown by MOVPE is useful for underlying physics. designed and improved properties GaAs optoelectronics devices and integrated optic elements with a multi -thin layers structure working by current.