摘要
本文通过热丝辅助等离子体增强化学气相沉积法 (HF PECVD)在单晶硅片和石英片衬底上分别成功生长了氮化硼薄膜材料。用X射线衍射 (XRD和傅立叶变换红外光谱 (FTIR)分析了薄膜样品的结构和组成 ,用扫描电镜 (SEM)观察了薄膜样品的表面形态 ,用紫外—可见光分光光度计 (UV)研究了薄膜样品的紫外吸收特征 ,并确认薄膜样品的光学能隙。此外 。
In the paper boron nitride photoelectric thin films were grown using hot\|filament and plasma enhanced chemical vapour deposition technique on monocrystalline silicon polished wafer and quarts glass polished wafer substrates respectively.Measurements of X\|ray diffraction, Infrared Spectrum,Scaning Electron Microscopy and UV\|visible spectrum were performed to study the films structure,surface morphology and ultraviolet absorbance characteristics.In addition,the optical bandgap of hte boron nitriede thin films was estimated and the roles of pretreatment of substrates by ultrasonic technique with cubic boron nitrede powder slurry were discussed.
出处
《材料科学与工程》
CSCD
北大核心
2002年第4期510-512,540,共3页
Materials Science and Engineering
基金
国家自然科学基金资助项目 (60 0 0 60 0 3)
