摘要
报导 MeV 硅离子注入半绝缘 GaAs 的快退火行为,根据缺陷作用原理分析了硅的不均匀激活和载流子分布特征.指出应按载流子浓度、迁移率、埋层电阻和击穿等特性综合评价深埋层和近表面层的品质,优化注入和退火参数.
The activation of MeV Si implants in SI-GaAs is energy and dose dependent.The nonuniformity of the activation and the unique feature of the carrier profiles are attributed mainly to the dopant-point defects inter- actions.To optimize implantation and annealing parameters,the quality of the implanted wafers should be evaluated comprehensively in terms of carrier concentration,mobility,sheet resistance and surface breakdown etc.
出处
《北京师范大学学报（自然科学版）》
CAS
CSCD
1992年第2期167-172,共6页
Journal of Beijing Normal University(Natural Science)
基金
国家自然科学基金
关键词
MEV
离子注入
退火
砷化镓
MeV ion implantation
activation
carrier
profile
gallium arsenide
