Ni单晶与外延生长In膜界面化合物的形成

COMPOUND FORMATION AT THE INTERFACE OF THIN In FILM EPITAXIALLY GROWN ON Ni SINGLE CRYSTAL

用扰动γγ角关联方法研究了低指数Ni单晶衬底与外延生长In膜界面的互扩散和界面化合物的形成。与Ni/In薄膜系统的结果进行了比较.除观察到相图中已知的全部Ni/In化合物外,发现了一个新的Ni/In化合物.相出现的次序都是从富In相到富Ni相.单晶衬底情况下,相形成与In膜厚度及衬底取向有关.

Interdiffusion and compound formation at the interface of thin In films epitaxially grown on low index Ni single crystal substrates are studied.The method applied is the perturbed γγ angular correlation,which is very sensitive to local structures and their changes around probe atoms. The results are compared to that of Ni/In thin film systems.All compounds known in Ni/In phase diagram as well as a new Ni/In compound are obse- rved after isochronal annealing.The occurrence of different Ni/In compounds is from the In-rich phase to the Ni-rich phase.It is found that the compo- und formation is dependent on In film thickness and the orientation of Ni substrates.