后注Ar^+对高能注P^+硅中二次缺陷的影响

THE EFFECT OF POST-IMPLANTED Ar^+ ON THE SECONDARY DEFECT IN HIGH ENERGY P+-IMPLANTED SILICON

用剖面的电子显微术(XTEM)研究了后注Ar^+对高能注P^+硅中二次缺陷的影响。结果表明,后注Ar^+像后注Si^+一样能够减少高能注P^+硅中的二次缺陷。但这种效果与退火过程密切相关,退火应该在后注Ar^+之后,而不是在其之前。实验还发现,在适当退火条件下,后注Ar^+产生的新二次缺陷比后注Si^+产生的要少一些。物理机制分析认为,后注Ar^+减少二次缺陷的物理机制与后注Si^+的是相似的。

By using cross-sectional transmission electron microscopy(XTEM) the effect of post-implanted Ar^+ on the secondary defects in high energy P^+-implanted silicon are investigated. The results show that as well as post-implanted Si^+, post-implanted Ar^+ can reduce the secondary defects in high energy P^+-implanted silicon. However, this reduction is closely related to annealing process. The annealing should be carried out after the post-implantation of Ar^+, but not before it. It is found that under the suitable annealing conditions, the new secondary defects caused by post-implantation of Ar^+ are a little bit less than that caused by post-implantation of Si^+. The analysis considers that the physical mechanism of the reduction of secondary defects by post-implantation of Ar^+ is same as that by the posti-mplantation of Si^+.