摘要
利用强束流离子注入过程中杂质扩散的数学模型,研究了部分对浓度分布影响较大的参数、试图分析和理解用MEVVA源注入金属的复杂过程。发现靶温是影响杂质分布及穿透深度的主要因素,化学反应有正效应和负效应之分;相关系数是一个重要的物理量,它跟原子-靶材料的组合有关。
Several parameters which affect the concentration profiles are studied with a mathematical model for metal implantation using a MEVVA ion source. The target temperature is found to be the key factor to affect profiles. Chemical reactions can offer two opposite effects on the retained concentration of the implants. Correlation factors are important in the model upon different ion-target combinations.
出处
《北京师范大学学报（自然科学版）》
CAS
CSCD
1992年第4期492-496,共5页
Journal of Beijing Normal University(Natural Science)
基金
"八六三"高科技课题资助项目
关键词
浓度分布
增强扩散
离子注入
concentration profile
radiation enhanced
diffusion
intermetallic compound
correlation factor
