基于腔面非注入区的半导体激光器的热特性分析

Thermal Analysis on Semiconductor Laser with Non-injection Region

利用Ansys有限元分析软件模拟了宽条形激光器腔面在不同生热率条件下对有源区温度的影响,并对带有腔面非注入区的激光器结构进行了热分析,比较了不同长度的非注入区结构的器件的温度特性。腔面的温升对器件可靠性影响极大,计算结果表明随着非注入区宽度的增加,芯片前腔面有源区的温度明显降低。结果为采用非注入区结构提高COD阈值功率提供了设计参考。

The temperature of the active region of the semiconductor laser was simulated by using Ansys with different heat generation on the cavity surface and different width of non-injection regions near cavity surface.The temperature rise of the facet has a great impact on the reliability of the laser.The results indicate that the temperature of the facet can be reduced effectively by the introduction of non-injection region.The temperature drop provides an advantage for suppressing the non-radiation recombination and optics absorption to improve the COD threshold.