基于立方相MgZnO薄膜的高响应度深紫外探测器

Cubic MgZnO Deep-ultraviolet Photodetector with High Responsivity

在超过相变临界厚度的立方相Mg0.29Zn0.71O薄膜上制备了Au插指电极MSM结构探测器件,30 V偏压下的峰值响应度可达27.9 A/W(268 nm),对应的外量子效率为12900%。分析认为原位生长在立方相MgZnO薄膜上的极薄的结构相变层引入了高密度的界面态,在立方相薄膜表面电极接触中起到了降低势垒、减小耗尽层宽度、增强电极注入电子的能力的作用,使得器件形成高的光导增益。

An MSM solar-blind UV photodetector was fabricated on Mg0. 29 Zn0. 71 O thin film, which showed a large responsivity of 27 . 9 A/W at 30 V bias ( 268 nm ) . The ultra thin phase-transition layer leads to the improvement of the metal-semiconductor contact and more internal gain. The re-sults provide a new choice to realize high performance MgZnO-based solar-blind UV detectors.