摘要
研究了金属预制层制备过程中溅射气压对Cu(In1-xGax)Se2(CIGS)薄膜及电池器件性能的影响。通过调节溅射气压改变预制层的结晶状态及疏松度与粗糙度,在合适的预制层结构下,活性硒化热处理过程中,可使Ga有效地掺入到薄膜中形成优质的CIGS固溶体。高溅射气压会使预制层过于致密,呈现非晶态趋势。经活性硒化热处理后,CIGS薄膜容易产生CIS与CGS"两相分离"现象,从而导致CIGS薄膜太阳电池的开路电压和填充因子降低,电池转换效率由10.03%降低到5.02%。
The influence of sputtering pressure on the structure and device performances of Cu(In1-xGax) Se2(CIGS) thin films is investigated. The crystalline and roughness of precursors can be moderated by choosing appropriate sputtering pressure,which may facilitate Ga incorporation into the lattice during the selenization process. With the sputtering pressure increases,the precursors tend to be amorphous state and become denser. As a result,the selenized films may display 'phase separation'of CIS and CGS which results in decrease of Vocand FF,and the cell efficiency drops from 10. 03% to 5. 02%.
出处
《发光学报》
EI
CAS
CSCD
北大核心
2015年第2期192-199,共8页
Chinese Journal of Luminescence
基金
国家自然科学基金(61076061)资助项目
关键词
溅射气压
粗糙度
CIGS固溶体
sputtering pressure
roughness
CIGS solid solution
