红色荧光粉La_2Mo_2O_9∶Eu^(3+),W^(6+)的制备及发光性能

Preparation and Luminescence Properties of La_2Mo_2O_9∶Eu^(3+),W^(6+) Red-emitting Phosphors

采用高温固相法合成出La2Mo2O9∶Eu3+,W6+系列红色荧光粉,其结构为立方晶系的β-La2Mo2O9。在395 nm光激发下,样品La1.40Mo2O9∶0.60Eu3+发射出很强的红光,最强发射峰位于616 nm处。适量地掺杂W6+离子可以提高样品的激发和发射强度,在395 nm光激发下,La1.40Mo1.84O9∶0.60Eu3+,0.16W6+荧光粉的Eu3+的5D0→7F2跃迁发射强度最大,是样品La1.40Mo2O9∶0.60Eu3+的1.23倍。最后,将La1.40Eu0.60Mo1.84O9∶0.16W6+荧光粉与~395 nm发射的In Ga N芯片一起制作成红光发光二极管(LED),该LED发射出很强的红光。

Red-emitting phosphors La2Mo2O9∶ Eu3 +and La2Mo2O9∶ Eu3 +,W6 +were synthesized by the conventional solid state method. The structure and luminescent properties of these phosphors were investigated. The results indicate that these phosphors are of single phases with cubic crystal structure. La2Mo2O9∶ Eu3 +and La2Mo2O9∶ Eu3 +,W6 +can be efficiently excited by near ultraviolet light,and the strongest excitation peak is at 395 nm. The emission intensity of La2Mo2O9∶ Eu3 +can be enhanced by introducing W6 +ions. La1. 40Eu0. 60Mo1. 84O9∶ 0. 16W6 +exhibites the strongest red emission,which is about 1. 23 times than that of La1. 40Mo2O9∶ 0. 60Eu3 +. The red light emitting diode( LED) was fabricated by coating In Ga N chip( ~ 395 nm emission) with the phosphor La1. 40Eu0. 60Mo1. 84O9∶ 0. 16W6 +,and red bright light could be observed from the LED. Hence La1. 40Eu0. 60Mo1. 84O9∶ 0. 16W6 +maybe find application on near-UV In Ga N-based white LEDs.