基于MoO_3/Ag/MoO_3透明阳极的顶发射OLED的模拟计算与制备

Simulation Calculation and Preparation of Top Emitting OLEDs with Transparent Anode of MoO_3/Ag/MoO_3

运用传输矩阵法和正交分析法模拟计算出MoO3/Ag/MoO3透明电极的最佳厚度,采用镀膜实验验证模拟计算的准确性,制备了一系列不同MoO3膜厚度和Ag膜厚度的透明电极。然后,制备了一系列顶发射有机电致发光器件:铝/氟化锂(Li F)/三(8-羟基喹啉)铝(Alq3)/N,N'-二苯基-N,N'-(1-萘基)-1,1'-联苯-4,4'-二胺/三氧化钼(MoO3)/银(Ag)/三氧化钼(MoO3),来进一步验证模拟计算运用在器件制备中的准确性。MoO3(10 nm)/Ag(10 nm)/MoO3(25 nm)在532 nm处的透射率达到最大值88.256%,以该透明电极制备的器件与参考器件相比,性能有了明显提高,最大亮度和最大效率分别为20076 cd/m2和4.03 cd/A,提高了18.5%和56%。器件性能的提高归因于顶发射OLED器件透射率的提高和MoO3对空穴注入能力的提升。

The transfer matrix method and the orthogonal analysis method were used to calculate the optimum film thickness of MoO3/ Ag / MoO3 as a transparent anode. In order to validate the accuracy of simulation calculation,MoO3/ Ag / MoO3 transparent anodes with different thickness of MoO3 and Ag films were fabricated. Then, the top emitting OLEDs with structure of Al / Li F / tris( 8-hydroxyquinolinato) aluminum( Alq3) /N,N'-bis-( 1-naphthyl)-N,N'-biphenyl-1,1'-biphenyl-4,4'-diamine( NPB) / MoO3/ Ag / MoO3 were fabricated to further verify the accuracy of the simulationcalculation used in device fabrication. When the electrode thickness is MoO3( 10 nm) /Ag( 10nm) / MoO3( 25 nm),the device reaches the most optimal performance. The maximum transmittance is 88. 256% at 532 nm. And the maximum luminance and luminous efficiency are 20 076 cd / m2 and 4. 03 cd / A,which are improved by 18. 5% and 56% compared with the reference device,respectively. The results demonstrate a practical way to fabricate highly efficient top emitting OLEDs.