基于混合型量子阱的GaN基垂直结构发光二极管性能

Performance of GaN-based Vertical Structure Light Emitting Diodes with Hybrid Quantum Wells

为解决Ga N基垂直结构发光二极管(VS-LEDs)在大电流驱动时效率下降的问题,制作了具有耦合量子阱(CQWs)和传统量子阱(NQWs)的混合型量子阱(HQWs)结构VS-LEDs。与NQWs结构VS-LEDs相比,HQWs结构VS-LEDs在350 m A输入电流下的正向偏压降低0.68 V,光输出功率提升53.0%,并有更好的电流响应效率。同时,NQWs结构和HQWs结构VS-LEDs的外量子效率分别下降到最大值的37.7%和67.5%,表明采用HQWs能使LEDs的效率下降得到大幅缓解。

In order to solve the problem that Ga N-based vertical structure LEDs( VS-LEDs) suffer from efficiency droop under high current injection level,hybrid quantum wells( HQWs) with coupled quantum wells( CQWs) and normal quantum wells( NQWs) were employed. Compared to VSLEDs with NQWs,VS-LEDs with HQWs had better properties,wherein forward voltage reduced by0. 68 V and light-output power increased by 53. 0% at a forward current of 350 m A. Meanwhile,the relative external quantum efficiencies of VS-LEDs with NQWs and VS-LEDs with HQWs reduced to37. 7% and 67. 5% of their maximum,respectively. The results reveal that the efficiency droop of LEDs can become less severe by exploiting HQWs.