旋涂速度对制备P3HT有机场效应晶体管性能的影响(英文)

Role of Spinning Speed in Fabrication of Spin-coated P3HT-based OFETs

采用溶液化的方法制备了以PMMA为绝缘层、P3HT为有源层的有机场效应晶体管。研究了P3HT有源层和PMMA绝缘层的旋涂速度对器件性能的影响。实验结果表明,当P3HT和PMMA的旋涂速度均为2 000 r/min时,器件的性能最佳。峰值场效应迁移率为6.84×10-2cm2·V-1·s-1。结果表明,选择适当的旋涂速度是一种有效提高溶液化制备有机场效应晶体管性能的方法。

P3HT-based organic field effect transistors( OFETs) with PMMA gate dielectric were fabricated by solu-tion process. The effects of the spinning speeds of both P3HT active layer and PMMA gate dielectric on the perform-ance of the devices were investigated. The experiment results show that the fabricated OFETs exhibit the optimal per-formance at the spinning speeds of 2 000 r/min of both P3HT and PMMA, of which the field effect mobility is 6. 84 × 10 -2 cm2 ·V-1 ·s-1 . This indicates that spinning speed is a technological parameter to improve the performance of solution-processed OFETs.