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GaAs基高功率半导体激光器单管耦合研究 被引量:8

Coupling Research of High Power Single GaAs Based Semiconductor Laser
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摘要 设计了一种高亮度、高功率半导体激光器单管耦合输出模块,采用波长为975 nm的10 W的Ga As基半导体激光器,将半导体激光器输出光束耦合进数值孔径0.18、纤芯直径105μm的光纤中,获得10 A电流下的输出功率为9.37 W,耦合效率为94.3%,亮度为1.64 MW/(cm2·str)。 A high brightness and high power fiber coupling laser module with single diode laser ( LD) was designed and fabricated. The wavelength of GaAs semiconductor laser is 975 nm and power is 10 W. The numerical aperture of the fiber is 0. 18 and the core diameter is 105μm. When the drive current is 10 A, 9. 37 W output power is obtained from the fiber, the coupling efficiency is 94. 3%, and the brightness is 1. 64 MW/(cm2·str).
出处 《发光学报》 EI CAS CSCD 北大核心 2015年第9期1018-1021,共4页 Chinese Journal of Luminescence
关键词 半导体激光器 光纤耦合 亮度 semiconductor laser fiber coupling brightness
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参考文献2

  • 1Brian Faircloth.High-brightness high-power fiber coupled diode laser system for material processing and laser pumping. Proceedings of SPIE the International Society for Optical Engineering . 2003
  • 2Zhou Z P.Fiber Coupling Design of Hundred-watt High Brightness Semiconductor Lasers. . 2014

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