GaN HEMT器件结构的研究进展

Research Progress of GaN HEMT Device Structure

Ga N高电子迁移率晶体管(HEMT)具有大的禁带宽度、高电子饱和速度、异质结界面的高二维电子气浓度、高击穿电压以及高的热导率,这一系列特性使它在高频、高功率、高温等领域得到了广泛的认可。本文首先论述了制约氮化镓高电子迁移率晶体管器件性能提高所遇到的问题及解决方法;然后,着重从优化材料结构设计和器件结构设计的角度,阐述了氮化镓高电子迁移率晶体管器件在高频高功率领域的最新研究进展;最后,讨论了器件进一步发展的方向。

GaN high electron mobility transistor ( HEMT) has been widely acknowledged for use in high-frequency, high-power, and high-temperature applications because of their features such as its wide band gap, high electron saturation velocity, high 2-DEG density at the hetero-interface, high breakdown voltage ( BV) , and high thermal conductivity. The issues that limit the gallium nitride high electron mobility transistor device performance improvement and some solutions are introduced firstly. And then, the latest research progress on the high-frequency, high-power area of gallium ni-tride high electron mobility transistor is reviewed in detail with focus on the material structural design and the device structural design. Finally, the direction for the development of the device is dis-cussed briefly.