热化学气相沉积法制备Sb掺杂ZnO纳米线的特性分析

Characteristic analysis of Sb-doped ZnO nano-wire prepared by thermo-chemical vapor deposition

本文以热化学气相沉积法在Si(100)基板上生长出Sb掺杂ZnO纳米线,分析了样品的结构及光电特性。SEM检测发现成长出宽约40~100 nm及长约数微米的纳米线结构;XRD分析表明纳米线为六方纤锌矿结构,其结晶度随Sb掺杂量增加而变差;TEM观测发现纳米线的生长方向为[0001]晶面,XPS分析表明Sb3+成功掺入ZnO晶体结构中;PL光谱得出掺Sb后纳米线的紫外光发光位置由382 nm红移至389 nm,536 nm处绿光发光强度减弱;电性测量表明微量Sb掺杂可提高ZnO纳米线的导电性能。

In this paper,Sb-doped ZnO nanowires were grown on Si(100)substrates by thermochemical vapor deposition.The structure and photoelectric properties of the samples were analyzed.SEM observations show that nanowires with a width of about 40-100 nm and a length of about several microns have been grown.XRD analysis shows that the nanowires are hexagonal wurtzite structure,and their crystallinity decreases with the increase of Sb doping amount.TEM observation shows that the growth direction of nanowires is[0001]crystal plane.XPS analysis shows that Sb3+successfully doped into the crystal structure of ZnO.After Sb doping,the ultraviolet luminescence position of nanowires shifted from 382 nm to 389 nm,and the green luminescence intensity decreased at536 nm.Electrical measurements show that the conductivity of ZnO nanowires can be improved by Sb doping.