SiC材料升华法生长机理

SiC Growth by the Sublimation Method: Growth Mechanism

讨论了SiC晶体升华法生长机理。从SiC晶体生长过程中的化学反应,热传输,物质传输以及缺陷的形成等方面进行了探讨。分析了化学计量比和保护气体压力对SiC单晶生长及其缺陷形成的影响。通过分析得到,要获得高质量的SiC单晶,必须有效地控制各种工艺参数。

SiC crystal growth by sublimation method is discussed with emphasis on chemical reactions, thermal transfer, mass transfer and defect formation during sublimation growth of SiC. The effects of stoichiometric proportion and ambient gas on crystal SiC, especially on the defects of SiC, were analyzed. Efficient control of the parameters of growing process is important to the crystal SiC quality.